PIXEL SENSOR HAVING DOPED ISOLATION STRUCTURE SIDEWALL

摘要

PROBLEM TO BE SOLVED: To provide an isolation structure used to isolate a pixel sensor device including a selectively doped sidewall. SOLUTION: A new pixel sensor structure formed on a first conductive-type substrate includes a second conductive-type photosensitive device and a first conductive-type surface pinning layer 180a. The isolation structure 101a is formed adjacent to a photosensitive device pinning layer. The isolation structure includes a dopant region containing a first conductive-type material selectively formed along sidewalls 105a, 105b of the isolation structure where the surface pinning layer is adapted so as to electrically connected to a substrate 150 located beneath. A suitable method for forming the dopant region selectively formed along the sidewall of the isolation structure includes an externally diffusing process that the dopant material present in a material layer formed and doped along a selected portion of the isolation structure is driven into the substrate located beneath during annealing. COPYRIGHT: (C)2007,JPO&INPIT