发明名称 ORGANIC SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a structure of an organic semiconductor thin film transistor capable of easily setting a threshold voltage to a voluntary value, and capable of easily manufacturing the organic semiconductor thin film transistor which is driven by a low voltage. SOLUTION: An organic semiconductor device comprises an organic semiconductor layer which constitutes an active layer of the organic semiconductor thin film transistor and has an electric field effect mobility; source-drain electrodes formed in the organic semiconductor layer; and an organic compound molecular layer for controlling the threshold voltage formed in the organic semiconductor layer at the source-drain electrodes in piles, and forming a charge transfer interface at an interval to the semiconductor layer. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006339538(A) 申请公布日期 2006.12.14
申请号 JP20050164854 申请日期 2005.06.03
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 ABE YASUSHI;HASEGAWA TATSUO;YAMADA JUICHI;TAKAHASHI YUKIHIRO;TOKURA YOSHINORI
分类号 H01L29/786;H01L51/05 主分类号 H01L29/786
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