| 摘要 |
PROBLEM TO BE SOLVED: To securely bury insulating films for element separation in grooves for element separation which differ in opening width, and to prevent element characteristics from deteriorating. SOLUTION: A first groove 8 for element separation which has a narrow opening width, and a second groove 18 for element separation which has a wide opening width, are formed in a silicon substrate 1. An HDP film 9 is formed thick enough to fill the groove 18 for element separation, and polishing by a CMP method is carried out to expose a void 9a formed on the side of the first groove 8 for element separation; and a polysilazane film 10 is formed therein to fill it and a polysilazone film 10 which is left outside is removed through CMP processing. The second groove 18 for element separation which has large capacity is not filled with polysilazane film 10, so STI 2 and 5 can be formed without causing none of problems of stress and fixed electric charges. COPYRIGHT: (C)2007,JPO&INPIT
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