| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin-film transistor mounting panel capable of making a thin-film transistor formed on a plastic substrate be hardly peeled from the plastic substrate even by heat of laser annealing. SOLUTION: The method has a process of performing heat processing or vacuum processing for the plastic substrate 11; a process of forming an amorphous silicon thin film 21a on the plastic substrate 11 subjected to the heat processing or vacuum processing; a step of applying laser-annealing to 22 the amorphous silicon thin film 21a to form a polysilicon thin film 21p; and a step of doping impurity ions into a predetermined region of the polysilicon thin film 21p, and then, performing laser-annealing 25 to thermally activate, thereby forming impurity diffusion regions 13s, 13d. The heat processing is preferably executed in conditions of a temperature range of 90°C-200°C and 10 minutes or more, and the vacuum processing is preferably executed in conditions of a range of 1×10<SP>-3</SP>Pa to 1×10<SP>-5</SP>Pa and 60 minutes or more. COPYRIGHT: (C)2007,JPO&INPIT
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