| 摘要 |
<P>PROBLEM TO BE SOLVED: To attain a data amplification without using a reference level. <P>SOLUTION: In a memory cell of the semiconductor memory device, a write-in transistor NM1 to be controlled by a write-in word line WWL is connected between a write-in bit line WBL and a storage node SN, and an inverter INV and a read-out transistor NM2 to be controlled by a read-out word line RWL are connected in cascade between the storage node SN and the read-out bit line RBL. <P>COPYRIGHT: (C)2007,JPO&INPIT |
