发明名称 |
Short channel semiconductor device fabrication |
摘要 |
The formation of one or more accumulation mode multi gate transistor devices is disclosed. The devices are formed so that short channel effects are mitigated. In particular, one more types of dopant materials are implanted in a channel region, an extension region and/or source/drain regions to mitigate the establishment of a conduction path and the accumulation of electrons in the channel region that can result in an unwanted leakage current. |
申请公布号 |
US2006281268(A1) |
申请公布日期 |
2006.12.14 |
申请号 |
US20050152596 |
申请日期 |
2005.06.14 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
COLINGE JEAN-PIERRE;XIONG WEIZE |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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