| 摘要 |
Provided are a polymer for photoresist and a photoresist composition comprising the same polymer, which have high stability to dry etching and stability to baking temperature after exposing and thus can form accurate pattern, and which can improve a margin depth of focus and a roughness of line edge. The polymer for photoresist is represented by formula(1). In the formula(1), each R* and R** is independently hydrogen or methyl group, each R1 and R2 is C1-C20 cyclic alkyl group, R is C3-C50 mono-cyclic or multi-cyclic, homo or hetero, saturated hydrocarbon, each x and y is 1, 2, or 3, and each a, b, and c, which is mol% of repeating unit consisting of the polymer, is 1-95 mole%. The photoresist composition comprises the polymer for photoresist, and a photoacid generator for generating an acid, and an organic solvent.
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