APPARATUS FOR PLASMA TREATMENT WITH CAPACITIVE COUPLED TYPE PLASMA SOURCE AND VERTICAL DUAL PROCESS CHAMBER

摘要

An apparatus for plasma treatment with a capacitive coupled type plasma source and a vertical dual process chamber is provided to simultaneously perform plasma treatment on wafers placed on the vertical dual process chamber by using a capacitive coupled type plasma source for inducing an electric field into first and second process chambers. Wafers(101a,102a) that plasma process is to be performed are vertically placed on a first process chamber(100a) and a second process chamber(100b). A capacitive coupled type plasma source(110) is arranged between the first and the second process chamber and induces electric field for generating plasma into the first and the second process chamber. The capacitive coupled type plasma source includes a first electrode(111), a second electrode(112), and an insulating wall(113). The first electrode is opposite toward the first process chamber. The second electrode is opposite toward the second process chamber. The insulating wall is located between the first and the second electrode.