| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for reducing a leak current of an insulating film and improving a dielectric constant. SOLUTION: In one embodiment of the manufacturing method of the semiconductor device, when forming an oxide insulating film (20) on a semiconductor substrate (11) by a CVD method, the material gas of the oxide insulating film and H<SB>2</SB>are simultaneously supplied to the semiconductor substrate. COPYRIGHT: (C)2007,JPO&INPIT
|
