| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition which ensures an improved pattern shape and an improved mask error factor, and a pattern forming method using the same. <P>SOLUTION: The positive resist composition comprises (A) a resin having a repeating unit having a partial structure represented by formula (I) and at least two kinds of repeating units having value for the expression (1a): (the total number of atoms)/[(the number of carbon atoms)-(the number of oxygen atoms)] being ≤3, (B) a compound which generates an acid upon irradiation with an actinic ray or radiation and (C) an organic solvent. <P>COPYRIGHT: (C)2007,JPO&INPIT |
