EVALUATING METHOD USING DRY ETCHING IN REMOTE PLASMA EQUIP

摘要

A method for evaluating a dry etching process is provided to prevent the over-etching of the inside of a chamber by performing a remote plasma manner using remote plasma equipment. A predetermined deposition material with a predetermined thickness is formed on a bare wafer(301). A plurality of first thickness values are obtained from a plurality of portions of the bare wafer by using an OPTI measurer(303). A plasma treatment is performed on the bare wafer in a chamber of an etching apparatus for a predetermined time(305). The bare wafer is unloaded from the chamber and a plurality of second thickness values are obtained from the same portions of the bare wafer to compare the second thickness values with the first thickness values(309).