| 摘要 |
A method for forming a semiconductor device is provided to obtain an exactly gate pattern by forming a photoresist pattern using pre-treatment ashing. A gate electrode layer(30') is stacked on a process substrate(10). An etch mask pattern(163) as a photoresist layer is formed on the gate electrode layer. The etch mask pattern is shrunken by performing pre-treatment ashing. Then, a gate pattern is formed by etching the gate electrode layer using the etch mask pattern as a mask. The pre-treatment ashing is performed by anisotropic etching.
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