发明名称 Increased responsivity photodetector
摘要 A photodetector includes a high-indium-concentration (H-I-C) absorption layer having a Group III sublattice indium concentration greater than 53%. The H-I-C absorption layer improves responsivity without decreasing bandwidth. The photoconversion structure that includes the H-I-C absorption layer can be formed on any type of substrate through the use of a metamorphic buffer layer to provide a lattice constant gradient between the photoconversion structure and the substrate. The responsivity of the photodetector can be further improved by passing an incoming optical signal through the H-I-C absorption layer at least twice.
申请公布号 US7148463(B2) 申请公布日期 2006.12.12
申请号 US20030621694 申请日期 2003.07.16
申请人 TRIQUINT SEMICONDUCTOR, INC. 发明人 MAHAJAN AADITYA;BEAM, III EDWARD A.;JIMINEZ JOSE L.;KETTERSON ANDREW A.
分类号 H01J40/14;H01L31/10;H01L31/00;H01L31/0304;H01L31/105 主分类号 H01J40/14
代理机构 代理人
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