发明名称 |
Increased responsivity photodetector |
摘要 |
A photodetector includes a high-indium-concentration (H-I-C) absorption layer having a Group III sublattice indium concentration greater than 53%. The H-I-C absorption layer improves responsivity without decreasing bandwidth. The photoconversion structure that includes the H-I-C absorption layer can be formed on any type of substrate through the use of a metamorphic buffer layer to provide a lattice constant gradient between the photoconversion structure and the substrate. The responsivity of the photodetector can be further improved by passing an incoming optical signal through the H-I-C absorption layer at least twice.
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申请公布号 |
US7148463(B2) |
申请公布日期 |
2006.12.12 |
申请号 |
US20030621694 |
申请日期 |
2003.07.16 |
申请人 |
TRIQUINT SEMICONDUCTOR, INC. |
发明人 |
MAHAJAN AADITYA;BEAM, III EDWARD A.;JIMINEZ JOSE L.;KETTERSON ANDREW A. |
分类号 |
H01J40/14;H01L31/10;H01L31/00;H01L31/0304;H01L31/105 |
主分类号 |
H01J40/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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