Process monitoring for ferroelectric memory devices with in-line retention test

摘要

The present invention facilitates evaluation of ferroelectric memory devices. A ferroelectric memory device is fabricated that comprises memory cells comprising ferroelectric capacitors ( 802 ). A short delay polarization value is obtained ( 804 ) by writing a data value, performing a short delay, and reading the data value. A long delay polarization value is obtained ( 806 ) by again writing the data value, performing a long delay, and again reading the data value. The short delay and long delay polarization values are compared ( 808 ) to obtain a data retention lifetime for the ferroelectric memory device. The obtained data retention lifetime is compared with acceptable values ( 810 ) and, if deemed unacceptable, avoids unnecessary performance of thermal bake data retention lifetime testing.