发明名称 |
Process for control of contours formed by etching substrates |
摘要 |
The present invention provides a process for controlling the contour of a feature in a transition area made by etching a substrate. This process includes applying a patterned resist mask to the substrate to form a plurality of mask openings and mask land areas. The mask land areas are sized and spaced to a control the contour of a feature on the substrate.
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申请公布号 |
US7147789(B1) |
申请公布日期 |
2006.12.12 |
申请号 |
US20030662934 |
申请日期 |
2003.09.15 |
申请人 |
HUTCHINSON TECHNOLOGY INCORPORATED |
发明人 |
MORLEY CATHERINE A.;SPONHOLZ MARK P.;YOUNG STEVEN R.;FANK STEVEN A.;BJORSTROM JACOB D. |
分类号 |
B44C1/22 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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