发明名称 Overtemperature detection device and semiconductor integrated circuit device
摘要 In a device having multiple power components adjacently arranged to each other, two diodes are disposed adjacent to each power component. The first diode is placed adjacent to any one of the sides of the power component, and the second diode is placed adjacent to the opposite side of the power component. The sides are opposed to the sides of adjacent power components. An overtemperature detection circuit outputs an overtemperature detection signal when outputs of the diodes both decrease under a reference voltage.
申请公布号 US7149069(B2) 申请公布日期 2006.12.12
申请号 US20040764541 申请日期 2004.01.27
申请人 DENSO CORPORATION 发明人 YAMAMOTO TOMOHISA
分类号 H02H5/04;G01K3/00;G01K7/01;H01L21/822;H01L27/04 主分类号 H02H5/04
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