发明名称 Method for correcting a mask design layout
摘要 A method for performing a mask design layout resolution enhancement includes determining a level of correction for a mask design layout for a predetermined parametric yield with a minimum total correction cost. The mask design layout is corrected at a determined level of correction based on a correction algorithm if the correction is required. In this manner, only those printed features on the mask design layout that are critical for obtaining a desired performance yield are corrected, thereby reducing total cost of correction of the mask design layout.
申请公布号 US7149999(B2) 申请公布日期 2006.12.12
申请号 US20040787070 申请日期 2004.02.25
申请人 THE REGENTS OF THE UNIVERSITY OF MICHIGAN 发明人 KAHNG ANDREW B.;GUPTA PUNEET;SYLVESTER DENNIS;YANG JIE
分类号 G06F17/50 主分类号 G06F17/50
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