METHOD OF PLASMA DOPING A SUBSTRATE WITH IONS AND APPARATUS FOR PLASMA DOPING A SUBSTRATE USING THE SAME

摘要

A plasma doping method and an apparatus for performing the same are provided to measure the quantity of ions being doped into a semiconductor substrate by using a power supply unit that is operated by two different modes. A doping gas is supplied to a plasma doping chamber(110). A first electrode(120) is arranged in the plasma doping chamber to support a substrate. A second electrode(130) is arranged on an upper portion of the first electrode. A plasma dose counting unit(140) is arranged adjacent to the second electrode. A power supply unit(150) is operated by a first mode and a second mode. The first mode grounds the second electrode and applies a first power to the first electrode to excite the doping gas to a plasma condition including ions and to dope the substrate. The second mode grounds the first electrode and applies a second power to the second electrode to induce the ions of the plasma into the dose counting unit.