发明名称 METHOD OF DEPOSITING AN AMORPHOUS CARBON FILM FOR METAL ETCH HARDMASK APPLICATION
摘要 Methods are provided for processing a substrate including etching conductive materials with amorphous carbon materials disposed thereon. In one aspect, the invention provides a method for processing a substrate including forming a conductive material layer on a surface of the substrate, depositing an amorphous carbon layer on the conductive material layer, etching the amorphous carbon layer to form a patterned amorphous carbon layer, and etching feature definitions in the conductive material layer corresponding to the patterned amorphous carbon layer. The amorphous carbon layer may act as a hardmask, an etch stop, or an anti-reflective coating.
申请公布号 KR20060127250(A) 申请公布日期 2006.12.11
申请号 KR20067020909 申请日期 2006.10.09
申请人 APPLIED MATERIALS INC. 发明人 WANG YUXIANG MAY;BITTRICH DAVID R.;BENCHER CHRISTOPHER DENNIS;BOTELHO HERALDO L.;RATHI SUDHA S. R.;KWAN MICHAEL CHIU
分类号 H01L21/3213;H01L21/027;H01L21/033;H01L21/205;H01L21/3065;H01L21/314 主分类号 H01L21/3213
代理机构 代理人
主权项
地址