摘要 |
A method of growing planar non-polar m-plane Ill-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the Ill-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer such as an aluminum nitride (AlN) on the annealed substrate, and growing the non-polar m-plane Ill-Nitride epitaxial layer on the nucleation layer using MOCVD. |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;IMER, BILGE, M.;SPECK, JAMES, S.;DENBAARS, STEVEN, P. |
发明人 |
IMER, BILGE, M.;SPECK, JAMES, S.;DENBAARS, STEVEN, P. |