SEMICONDUCTOR DEVICE STRUCTURE AND METHOD THEREFOR

摘要

A device structure (10, 40) and method for forming the device structure has a semiconductor substrate (12, 42) with an overlying first metal oxide layer (16, 46), an overlying intermediate layer (18, 48) with a first metal and either nitrogen or carbon, and an overlying second metal oxide layer (20, 50). Oxygen is then provided to the intermediate layer (18, 48). The oxygen has the effect of changing the intermediate layer (18, 48) from a conducting layer to a dielectric layer (19, 53). A final device may then be formed, for example, by forming a gate (24, 58) and two current electrodes (29, 30, 62, 64).