发明名称 Contact structure and contact liner process
摘要 A contact structure and a method of forming thereof for semiconductor devices or assemblies are described. The method provides process steps to create a contact structure encompassed by a sacrificial contact medium having an opening therein that is lined with a conductive spacer liner that effectively prevents the contact structure from being damaged during removal of the surrounding sacrificial contact medium material. The sacrificial contact medium is then replaced with a non-boron doped dielectric material.
申请公布号 US2006276035(A1) 申请公布日期 2006.12.07
申请号 US20060495438 申请日期 2006.07.28
申请人 HUGLIN GRANT S;BURKE ROBERT J;TANG SANH D 发明人 HUGLIN GRANT S.;BURKE ROBERT J.;TANG SANH D.
分类号 H01L21/44 主分类号 H01L21/44
代理机构 代理人
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