发明名称 |
Contact structure and contact liner process |
摘要 |
A contact structure and a method of forming thereof for semiconductor devices or assemblies are described. The method provides process steps to create a contact structure encompassed by a sacrificial contact medium having an opening therein that is lined with a conductive spacer liner that effectively prevents the contact structure from being damaged during removal of the surrounding sacrificial contact medium material. The sacrificial contact medium is then replaced with a non-boron doped dielectric material.
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申请公布号 |
US2006276035(A1) |
申请公布日期 |
2006.12.07 |
申请号 |
US20060495438 |
申请日期 |
2006.07.28 |
申请人 |
HUGLIN GRANT S;BURKE ROBERT J;TANG SANH D |
发明人 |
HUGLIN GRANT S.;BURKE ROBERT J.;TANG SANH D. |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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