METHOD FOR MODIFICATION OF BUILT IN POTENTIAL OF DIODES
摘要
In broad terms the present invention is a semiconductor junction comprising a first material (102) and a second material (104), in which a surface of one or both of the junction materials has a periodically repeating structure that causes electron wave interference resulting in a change in the way electron energy levels within the junction are distributed.
申请公布号
WO2006079084(A3)
申请公布日期
2006.12.07
申请号
WO2006US02541
申请日期
2006.01.24
申请人
BOREALIS TECHNICAL LIMITED;TAVKHELIDZE, AVTO;BIBILASHVILI, AMIRAN;COX, RODNEY, T.
发明人
TAVKHELIDZE, AVTO;BIBILASHVILI, AMIRAN;COX, RODNEY, T.