MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC RECORDING/REPRODUCING APPARATUS, AND MAGNETIC MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element which can obtain high MR changing rate corresponding to high density record while keeping a low resistance. SOLUTION: The magnetoresistance effect element has three or more metallic magnetic layers, a connection layer provided among the three or more metallic magnetic layers and an electrode for feeding a current in the orthogonal direction to the metallic magnetic layer and the connection layer. The magnetizing direction of a lowermost metallic magnetic layer or an uppermost metallic magnetic layer of the three or more metallic magnetic layers is fixed, and the magnetizing direction of the middle metallic magnetic layer is twisted so that the magnetizing direction of the lowermost metallic magnetic layer is almost orthogonal to the magnetizing direction of the uppermost metallic magnetic layer when the external magnetic field is zero. COPYRIGHT: (C)2007,JPO&INPIT