| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a nonvolatile memory cell in which reliability of a tunnel oxide film is enhanced, and to provide its fabrication process. SOLUTION: The semiconductor device 1 comprises a semiconductor substrate 40, a floating gate electrode 11(FG) for storing charge formed on the major surface of the semiconductor substrate 40, a plurality of assist gate electrodes 12(AG) formed on the opposite sides of the floating gate electrode 11 on the major surface of the semiconductor substrate 40, an ONO film 90 provided between the floating gate electrode 11 and the assist gate electrode 12, and a control gate electrode 13(CG) provided on the floating gate electrode 11 and the plurality of assist gate electrodes 12 through an ONO film 110 and extending in the direction intersecting the plurality of assist gate electrodes 12. Three types of gate electrodes 11, 12 and 13 are formed in the order of FG-AG-CG. COPYRIGHT: (C)2007,JPO&INPIT
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