发明名称 |
ZEOLITE FILMS FOR LOW K APPLICATIONS |
摘要 |
A method is provided for making an integrated circuit dielectric. A structure-directing agent (SDA) is provided. Preferably this structure-directing agent is a salt of a polycyclic organic compound. By use of the structure-directing agent, a film of a zeolite having a framework density below 15 T atoms per 1000 cubic angstroms and comprising primarily silicon and/or germanium atoms in the T positions is provided on a semiconductor substrate. Preferably the zeolite has the LTA structure. The structure-directing agent is removed from the film. The removal may be effected, for example, by heating or by chemically and/or photochemically decomposing the structure-directing agent, preferably in a manner which allows it to be recovered. The film is then optionally modified to reduce its hydrophilicity. |
申请公布号 |
WO2005109475(A3) |
申请公布日期 |
2006.12.07 |
申请号 |
WO2005US15647 |
申请日期 |
2005.05.04 |
申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY;DAVIS, MARK, E. |
发明人 |
DAVIS, MARK, E. |
分类号 |
H01L21/31;C01B39/04;H01L21/00;H01L21/316;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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