| 摘要 |
PROBLEM TO BE SOLVED: To provide an SiC semiconductor device and its manufacturing method, wherein a wiring electrode with high adhesive properties can be formed without carrying out a removal process of a graphite layer. SOLUTION: An Ni silicide film 3 has been previously formed on an Ni film 2 prior to formation of a graphite layer 5. If so doing, when the Ni film 2 is silicified, the graphite layer 5 can be chemically coupled to the Ni silicide film 3. Thus, the graphite layer 5 can be joined to the Ni silicide film 3 with a high adhesive strength. Since a wiring electrode 6 can be formed not on a surface of the graphite layer 5 but on the Ni silicide film 3, the wiring electrode 6 is not separated from the Ni silicide film 3. For this reason, the wiring electrode 6 can be prevented from separating without carrying out the removal process of the graphite layer 5. COPYRIGHT: (C)2007,JPO&INPIT
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