ORGANIC THIN-FILM TRANSISTOR

摘要

Disclosed is an organic thin-film transistor wherein leakage current is prevented in the gate insulating film, high insulating film capacitance can be obtained and a hysteresis is hardly caused. This organic thin-film transistor can be operated at low gate voltage. Specifically disclosed is an organic thin-film transistor comprising, on a substrate, an organic semiconductor film (A), a gate electrode (B), a source electrode (C), a drain electrode (D), and a gate insulating film (E) containing an organic polymer compound having no functional group with an unshared electron pair while having no p-electron bond in a molecular structure, preferably an alicyclic olefin polymer having no functional group with an unshared electron pair while having no p-electron bond in a molecular structure.