发明名称 SEMICONDUCTOR IMAGE SENSOR MODULE AND METHOD FOR MANUFACTURING SAME
摘要 A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.
申请公布号 WO2006129762(A1) 申请公布日期 2006.12.07
申请号 WO2006JP311007 申请日期 2006.06.01
申请人 SONY CORPORATION;IWABUCHI, SHIN;MOTOYOSHI, MAKOTO 发明人 IWABUCHI, SHIN;MOTOYOSHI, MAKOTO
分类号 H01L27/14;H01L27/00;H01L27/10;H01L27/146;H04N5/374;H04N5/378 主分类号 H01L27/14
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