FLASH MEMORY DEVICE AND READ METHOD THEREOF

摘要

A flash memory device and a read method thereof are provided to perform accurate read operation, by compensating the voltage loss generated in a sensing node of a page buffer. According to a read method of a flash memory device, a bit line and a sensing node are precharged(2100). Develop is performed as to the bit line and the sensing node(2200). The data value of a selected memory cell is recognized in response to the develop result of the sensing node. Voltage loss of the sensing node is compensated by recharging the sensing node(2300). While the bit line is developed, the sensing node is developed.