发明名称 |
PLASMA ETCHING DEVICE FOR PHOTOMASK, AND ETCHING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To realize a plasma etching device for photomask excellent in controllability of in-plane etching speed of a photomask substrate. <P>SOLUTION: The plasma etching device for photomask includes: lower electrodes 3a and 3b for generating plasma; and a lower electrode (a) for controlling electric capacity between the lower electrodes 3a and 3b and the photomask substrate 9 carried thereon. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2006332336(A) |
申请公布日期 |
2006.12.07 |
申请号 |
JP20050153947 |
申请日期 |
2005.05.26 |
申请人 |
TOSHIBA CORP |
发明人 |
MOTOKAWA KOJI;TONOTANI JUNICHI |
分类号 |
H01L21/3065;G03F1/68;G03F1/80 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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