发明名称 PLASMA ETCHING DEVICE FOR PHOTOMASK, AND ETCHING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To realize a plasma etching device for photomask excellent in controllability of in-plane etching speed of a photomask substrate. <P>SOLUTION: The plasma etching device for photomask includes: lower electrodes 3a and 3b for generating plasma; and a lower electrode (a) for controlling electric capacity between the lower electrodes 3a and 3b and the photomask substrate 9 carried thereon. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006332336(A) 申请公布日期 2006.12.07
申请号 JP20050153947 申请日期 2005.05.26
申请人 TOSHIBA CORP 发明人 MOTOKAWA KOJI;TONOTANI JUNICHI
分类号 H01L21/3065;G03F1/68;G03F1/80 主分类号 H01L21/3065
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