| 摘要 |
The invention includes methods of etching nickel silicide and cobalt silicide, and methods of forming conductive lines. In one implementation, a substrate comprising nickel silicide is exposed to a fluid comprising H<SUB>3</SUB>PO<SUB>4 </SUB>and H<SUB>2</SUB>O at a temperature of at least 50° C. and at a pressure from 350 Torr to 1100 Torr effective to etch nickel silicide from the substrate. In one implementation, at least one of nickel silicide or cobalt silicide is exposed to a fluid comprising H<SUB>2</SUB>SO<SUB>4</SUB>, H<SUB>2</SUB>O<SUB>2</SUB>, H<SUB>2</SUB>O, and HF at a temperature of at least 50° C. and at a pressure from 350 Torr to 1100 Torr effective to etch the at least one of nickel silicide or cobalt silicide from the substrate.
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