LIGHT SENSOR AND DISPLAY DEVICE

摘要

A light sensor (1) provided with semiconductor regions (2-4, 9, 10) formed on a silicon film (11) and intrinsic semiconductor regions (5-8) is used. The semiconductor regions (2-4, 9, 10) are arranged along the surface of the silicon film (11) in a row at intervals so that the adjacent semiconductor regions have opposite conductivity types. The intrinsic semiconductor regions (5-8) are arranged in contact with the adjacent semiconductor regions between the adjacent semiconductor regions. PIN photodiodes (D1-D4) are composed of the intrinsic semiconductor regions (5-8) and the adjacent semiconductor regions.