Method for producing a single crystal

摘要

The present invention provides a method for producing a single crystal by pulling a single crystal from a raw material melt in a chamber in accordance with Czochralski method, comprising pulling a single crystal having a defect-free region which is outside an OSF region to occur in a ring shape in the radial direction and which interstitial-type and vacancy-type defects do not exist in, wherein the pulling of the single crystal is performed with being controlled so that an average of cooling rate in passing through a temperature region of the melt point of the single crystal to 950° C. is in the range of 0.96° C./min or more and so that an average of cooling rate in passing through a temperature region of 1150° C. to 1080° C. is in the range of 0.88° C./min or more and so that an average of cooling rate in passing through a temperature region of 1050° C. to 950° C. is in the range of 0.71° C./min or more. Thereby, production margin in pulling a single crystal having a defect-free region can be considerably enlarged and therefore there can be provided a method for producing a single crystal by which production yield and productivity of the crystal having the defect-free region can be considerably improved.