发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A method for manufacturing a semiconductor device is provided to stably form a copper wire without an air gap in a pattern by performing a pre-wetting process using a mixture liquid mixed accelerant with deionized water. A substrate(100) on which a seed layer(102) is formed is provided. A pre-wetting process(103) using a mixture liquid mixed of an accelerant and deionized water is performed on the seed layer to absorb the mixture liquid on an upper surface of the seed layer. An electrical coating process using a coating liquid is performed to form a copper wire on an upper portion of the seed layer. The substrate is loaded into a pre-setting tank where the mixture liquid is filled in the pre-wetting process. The pre-wetting tank is sealed in the pre-wetting process. A pressure is applied between the mixture liquid and the substrate to absorb the mixture liquid on the upper portion of the seed layer in the pre-wetting process.
申请公布号 KR20060125213(A) 申请公布日期 2006.12.06
申请号 KR20050047131 申请日期 2005.06.02
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 LEE, MIN HYUNG
分类号 H01L21/28 主分类号 H01L21/28
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