| 摘要 |
Provided are a photoacid generator for immersion lithography not dissolving in aqueous liquid for immersion lithography, and a photoresist composition comprising the photoacid generator. The photoacid generator contains a repeating unit of formula 1. In the formula, X1 is a C1-C10 alkylene, sulfur or oxygen, and A is a group having a function of generating an acid with light. The photoresist composition comprises the photoacid generator, a photoresist polymer, and an organic solvent. The composition is used for immersion lithography. The photoresist polymer is a chemically amplified photoresist polymer. The photoresist polymer is represented by formula(3). In the formula(3), weight relative ratio of e:f:g is 8-12:1-2:6-8. The organic solvent is at least one selected from the group consisting of methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, propylene glycol methyletheracetate, cyclohexanone, 2-heptanone, and ethyllactate.
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