发明名称 THIN FILM TRANSISTOR ARRAY PANEL
摘要 A thin film transistor substrate is provided to reduce the parasitic capacitance between a pixel electrode and a gate line due to a voltage difference generated between a pair of pixel electrodes, by asymmetrically designing the distances between pixel electrodes and adjacent gate lines. A plurality of pixels have a plurality of pixel electrodes(190) and switching elements connected to the pixel electrodes. A plurality of gate lines(121a,121b) are electrically connected to the switching elements, wherein at least two gate lines are assigned to each row of pixel electrodes. A plurality of data lines(171) are electrically connected to the switching elements, wherein one data line is assigned to two columns of pixels. A first distance between one of a pair of pixel electrodes and an adjacent gate line is different from a second distance between the other of the pair of pixel electrodes and an adjacent gate line.
申请公布号 KR20060125238(A) 申请公布日期 2006.12.06
申请号 KR20050047174 申请日期 2005.06.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, YONG SOON;KANG, NAM SOO;PARK, HAENG WON;MOON, SEUNG HWAN
分类号 G02F1/136 主分类号 G02F1/136
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