发明名称 |
THIN FILM TRANSISTOR ARRAY PANEL |
摘要 |
A thin film transistor substrate is provided to reduce the parasitic capacitance between a pixel electrode and a gate line due to a voltage difference generated between a pair of pixel electrodes, by asymmetrically designing the distances between pixel electrodes and adjacent gate lines. A plurality of pixels have a plurality of pixel electrodes(190) and switching elements connected to the pixel electrodes. A plurality of gate lines(121a,121b) are electrically connected to the switching elements, wherein at least two gate lines are assigned to each row of pixel electrodes. A plurality of data lines(171) are electrically connected to the switching elements, wherein one data line is assigned to two columns of pixels. A first distance between one of a pair of pixel electrodes and an adjacent gate line is different from a second distance between the other of the pair of pixel electrodes and an adjacent gate line. |
申请公布号 |
KR20060125238(A) |
申请公布日期 |
2006.12.06 |
申请号 |
KR20050047174 |
申请日期 |
2005.06.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, YONG SOON;KANG, NAM SOO;PARK, HAENG WON;MOON, SEUNG HWAN |
分类号 |
G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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