METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent open phenomenon of a gate line profile by capping a gate line with an oxide layer and then depositing a nitride layer. Plural gate lines are formed on a semiconductor substrate(21). Light oxidation is performed on the whole surface of the resultant structure. A first buffer oxide layer is formed along a profile of the resultant structure including the gate lines. The first buffer oxide layer is blanket-etched. A second buffer oxide layer(29) and a nitride layer(30) are formed along a profile of the resultant structure. The blanket etching is performed by ion sputtering using an inert gas. The first and second buffer layers are formed by using SiH4/O2 gas with 50Š-100Š thickness.