CMOS IMAGE SENSOR, AND METHOD FOR FABRICATING THE SAME

摘要

A CMOS image sensor is provided to form a color filter and an OCL(over coating layer) formed on the color filter even at a high temperature by forming a color filter of an SOG(silicon on glass) layer. A photodiode is formed on a semiconductor substrate(301). At least one insulation layer is formed on the photodiode. An SOG layer is formed on the insulation layer, including a component capable of absorbing a color. A passivation layer(311) for protecting a device is formed, and a color filter array(307) including the photodiode, the insulation layer and the SOG layer is formed on the passivation layer.