| 摘要 |
A method for fabricating a capacitor is provided to obtain an excellent layer characteristic as compared with a conventional technique by doping Ti into Ta2O5 and by inducing a dielectric layer with an excellent leakage current characteristic according to the doping quantity. A TaO deposition cycle and a TiO deposition cycle are alternately performed in a predetermined ratio on a lower electrode so as to form a Ta1-xTixO dielectric layer. An upper electrode is formed on the Ta1-xTixO dielectric layer. The TaO deposition cycle and the TiO deposition cycle are performed in the ratio of 9:1.
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