发明名称 APPARATUS FOR GENERATING POWER UP SIGNAL OF SEMICONDUCTOR MEMORY
摘要 A power up signal generator of a semiconductor memory is provided to supply a stable power supply voltage by enabling a power up signal after an external voltage reaches an accurate target voltage by preventing an operation error of an inverter and a latch during initial supply of the external voltage. A detection unit(110) outputs a detection signal by detecting whether an external voltage is above a first set level. An output unit(120) changes the detection signal into a logic level signal and then outputs a power up signal. An output control unit(130) controls the output unit in order for the power up signal to maintain a disable state when the external voltage is below a second set level. The first set level is a voltage level two times of a threshold voltage of one of transistors used in the power up signal generator.
申请公布号 KR100656427(B1) 申请公布日期 2006.12.05
申请号 KR20050106963 申请日期 2005.11.09
申请人 HYNIX SEMICONDUCTOR INC. 发明人 BYEON, SANG JIN;JEONG, CHUN SEOK
分类号 G11C7/20 主分类号 G11C7/20
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