发明名称 |
APPARATUS FOR GENERATING POWER UP SIGNAL OF SEMICONDUCTOR MEMORY |
摘要 |
A power up signal generator of a semiconductor memory is provided to supply a stable power supply voltage by enabling a power up signal after an external voltage reaches an accurate target voltage by preventing an operation error of an inverter and a latch during initial supply of the external voltage. A detection unit(110) outputs a detection signal by detecting whether an external voltage is above a first set level. An output unit(120) changes the detection signal into a logic level signal and then outputs a power up signal. An output control unit(130) controls the output unit in order for the power up signal to maintain a disable state when the external voltage is below a second set level. The first set level is a voltage level two times of a threshold voltage of one of transistors used in the power up signal generator.
|
申请公布号 |
KR100656427(B1) |
申请公布日期 |
2006.12.05 |
申请号 |
KR20050106963 |
申请日期 |
2005.11.09 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
BYEON, SANG JIN;JEONG, CHUN SEOK |
分类号 |
G11C7/20 |
主分类号 |
G11C7/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|