METHOD FOR FABRICATING CONTACT HOLE IN SEMICONDUCTOR DEVICE

摘要

A method for fabricating a contact hole of a semiconductor device is provided to improve a gap-fill margin of a plug conductive layer and a short margin between the plug conductive layer and an adjacent contact hole by preventing a bowing effect. An insulating layer(22) is formed on a conductive layer. A hard mask pattern is formed on the insulating layer. A part of the insulating layer is etched by using the hard mask pattern as an etching barrier. A contact opening is formed by etching partially the insulating layer. A polymer is formed on a sidewall of the partially etched contact opening. A contact hole(27) is formed by etching the insulating layer in order to expose the conductive layer. The polymer and the hard mask pattern are removed therefrom.