| 摘要 |
A semiconductor memory device having a sense amplifier over-driving scheme and a method for over-driving the sense amplifier are provided to prevent current consumption due to excessive over-driving, by over-driving a sense amplifier of a corresponding memory block after dividing a memory core region into a plurality of memory blocks. A plurality of memory blocks(BK0~BK3) includes sense amplifiers. A sense amplifier over-driving control part(110-1,110-2) generates a plurality of block over-driving signals by assembling a plurality of block selection signals to select the memory blocks and a sense amplifier over-driving signal. A sense amplifier over-driving part(120-1,120-2) over-drives sense amplifiers of a memory block performing an actual operation in response to the block over-driving signals.
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