| 发明名称 |
Methods of forming boron carbo-nitride layers for integrated circuit devices |
| 摘要 |
The present invention includes methods for forming a boron carbo-nitride layer. Additional embodiments include thermal chemical vapor deposition methods for forming a boron carbo-nitride layer. Also integrated circuit devices with a boron carbo-nitride layer are disclosed.
|
| 申请公布号 |
US7144803(B2) |
申请公布日期 |
2006.12.05 |
| 申请号 |
US20040826564 |
申请日期 |
2004.04.16 |
| 申请人 |
SEMICONDUCTOR RESEARCH CORPORATION |
发明人 |
ENGBRECHT EDWARD R.;EKERDT JOHN G.;SUN YANG-MING;JUNKER KURT H. |
| 分类号 |
H01L21/4763;H01L21/318;H01L21/768 |
主分类号 |
H01L21/4763 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
