发明名称 MASKS, LITHOGRAPHY DEVICE AND SEMICONDUCTOR COMPONENT
摘要 <p>The invention relates to masks comprising a multilayer coating of a specified period thickness distribution such as those used in lithography devices for producing semiconductor components. One problem of projection optics concerns pupil apodization which leads to imaging defects. The invention provides that the period thickness in the mask plane is selected so that it is greater than the period thickness ideal for maximum reflectivity. As a result, not only does the apodization over the pupil become more symmetric but the intensity variation also becomes smaller overall.</p>
申请公布号 KR20060123721(A) 申请公布日期 2006.12.04
申请号 KR20067004914 申请日期 2003.09.17
申请人 CARL ZEISS SMT AG 发明人 MANN HANS JURGEN;LOWISCH MARTIN;SINGER WOLFGANG
分类号 H01L21/027;G03F1/00;G03F1/24;G03F7/20 主分类号 H01L21/027
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