STACKED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A stacked semiconductor device is provided to sufficiently guarantee electrical reliability even if a lower semiconductor structure is electrically connected to an upper semiconductor structure by using an impurity-doped plug whose electrical resistance isn't relatively high. A multilayered insulation layer pattern(50) in which at least two interlayer dielectric patterns are vertically stacked is formed on a sheath thin film, including a chimney-type opening(56) exposing the surface of the sheath thin film. An active thin film(40) whose lateral surface is exposed by the chimney-type opening is formed on each interlayer dielectric pattern. A selective epitaxial growth process and a process for supplying substantially the same impurities as the impurities doped into the exposed sheath thin film are performed to form a first plug(54) doped with the impurities on the exposed sheath thin film. The chimney-type opening is sufficiently filled with a metal interconnection(58) connected to the first plug. The active thin film is formed by a selective epitaxial growth process. A second plug undoped with impurities is formed on the first plug.