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发明名称
Methods of forming trench isolation in semiconductor device and trench isolation structure fabricated thereby
摘要
申请公布号
KR100653704(B1)
申请公布日期
2006.12.04
申请号
KR20040078477
申请日期
2004.10.01
申请人
发明人
分类号
H01L21/76
主分类号
H01L21/76
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代理人
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