| 摘要 |
<p>A magnetic memory device and a forming method thereof is provided to minimize program disturbance by eliminating the necessity of a conventional precise alignment process. A first writing diode(WD1), a reading diode(RD), and a second writing diode(WD2) are sequentially connected in parallel with a common line(CL). A magnetic tunnel junction(MTJ) structure is connected to the reading diode. First and second writing conductors(WE1,WE2) are respectively connected to the first and second writing diodes, positioned at both sides of the magnetic tunnel junction structure. A first writing line, a reading line and second writing line are respectively connected to the first writing conductor, the magnetic tunnel junction structure and the second writing conductor. The forward output terminals of the first writing diode, the reading diode and the second writing diode are connected to the common line. The forward input terminals of the first writing diode, the reading diode and the second writing diode are respectively connected to the first writing conductor, the magnetic tunnel junction structure and the second writing conductor.</p> |
