| 摘要 |
In one embodiment, a method for forming a semiconductor device, comprises forming a first aperture (450) and a second aperture (452) in a first surface of the substrate (440) , the first and second apertures being coaxial; forming, in the first aperture, a first conductive path between the first surface of the substrate and a second surface of the substrate; and forming, in the second aperture, a second conductive path between the first surface of the substrate and a second surface of the substrate . |
