| 摘要 |
PROBLEM TO BE SOLVED: To provide an agent for treating the surface of a semiconductor substrate and a method for treating the surface of the semiconductor substrate, especially an etching agent and an etching method for the semiconductor substrate by which contamination of metal impurities in the semiconductor substrate can be suppressed. SOLUTION: (1) The surface treating agent for the semiconductor substrate includes an amino polycarboxylic acid base chelating agent or its inorganic salt and alkaline metal hydroxide of 20% (W/W) or more. (2) The etching agent for the semiconductor substrate includes an amino polycarboxylic acid base chelating agent or its inorganic salt and alkaline metal hydroxide of 20% (W/W) or more. (3) In the method for treating the surface of the semiconductor substrate, the semiconductor substrate is treated by the treating agent described in (1). (4) In the method for etching the semiconductor, the semiconductor substrate is etched by the etching agent described in (2). COPYRIGHT: (C)2007,JPO&INPIT
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